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FIB-based delayering is a technique that selectively removes specific layers in semiconductor devices or package structures using a Focused Ion Beam (FIB), enabling detailed analysis of underlying layers and potential defects.

When using Hydra FIB, higher milling rates and more uniform delayering over larger areas can be achieved compared to conventional Ga FIB systems. In addition, selective Cu delayering can be performed on targeted regions.

This technique is particularly useful for advanced device structures where conventional physical or chemical wet delayering methods are difficult to apply. With precise position control, site-specific delayering can also be effectively implemented.

BEOL Structure and Cu Interconnection Analysis

Process Defect Analysis

Advanced Node & Complex Stack Structure Analysis

Pad Formation