Technology Introduction
Large-area FIB cross-section analysis is a technique that uses Hydra FIB to precisely mill cross sections across wide regions, typically several hundred micrometers, in semiconductor devices and package structures for detailed internal structural analysis.
Compared to conventional Ga FIB systems, Hydra FIB enables significantly faster milling speeds, allowing efficient cross-sectional analysis over large areas on the order of hundreds of micrometers. This capability makes it possible to more effectively identify process defects, structural failures, and process variations.
Application
Semiconductor Device Structure Analysis
Advanced Packaging Structure Analysis
Process and Reliability Failure Analysis
The Equipment
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Feature
Description
Model / Maker
Helios 5 Hydra / ThermoFisher Scientific
Function
Cross section analysis
TEM Lamella Preparation (Ga damage free)
FIB Delayering
SEM
SEM Resolution
At optimum WD : 0.7m @ 1kV, 1nm@500V
At coincident point : 0.6nm@15kV, 1.2nm@1kV
Ion
Ion bean current range
1.5pA to 2.5uA
Accelerating voltage range
500V~30kV
Ion species
Xe, Ar, O, N (Switching <10mins)
Accessory
EDS
Ultim Max 170 (170mm²)
Key benefits
Large area cross sectional analysis for 200µm x 200µm cross section
Ar : 45min
Xe : 1.5 hrs
Ga : 30 hrsO milling : cleaner and smoother cut faces
Technical Use Case
