顧客および技術支援

不良発生原因および分析

不良原因 不良メカニズム 不良形態
ショート オープン 漏洩電流増加 耐電圧不良 VT,hFE 切替 不安全作動 抵抗干渉 熱抵抗増加 半田付け不足
Bulk,
Board,
diffusion,
PN Junction,
Isolation
Crystal defect
Crack
Surface contamination
Junction degradation
Impurity deposition
Unadjustable mask
Gate oxide film Movable ion
Interface level
TDDB
Hot electron
Metallization,
on-chip writing,
through hole,
contact
Insufficlent adhesion strength
Ohmic contact
Stage cut
Uneven thickness
Scar
Corrosion
Electromigration
Al projection due to Al-Si alloy formation
Al shift due to mild force
Passivation,
surface protective film,
Inter-layer insulation film
Pin hole
Crack
Uneven thickness
(step coverage block)
Unstable physical characteristics of film
Contamination
Surface Inversion
Die bonding Crack(uneven force, vold)
Chip peeling (insufficient adhesion strength)
Thermal fatigue
Wire bonding Substrate defect
Removed bonding
Intermatallic compound generation
Damage and crack below bonding
Bonding positional shift
Loose wiring
Line break
Short between lines
Package,
lead frame,
resin,
lead plating
Moisture(resin bulk)
Moisture(resin interface)
Impure ion of resin
Surface contamination
Hardening force
Lead rust, oxidation
Lead break
Particle
I/O pin Static electricity
Overvoltage