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发生不良原因及分析

不良原因 不良机制 不良形态
Short Open 泄露电流增加 内电压不良 VT,hFE变换 不完整操作 电阻干涉 热电阻增加 焊接不够
Bulk,
Board,
diffusion,
PN Junction,
Isolation
Crystal defect
Crack
Surface contamination
Junction degradation
Impurity deposition
Unadjustable mask
Gate oxide film Movable ion
Interface level
TDDB
Hot electron
Metallization,
on-chip writing,
through hole,
contact
Insufficlent adhesion strength
Ohmic contact
Stage cut
Uneven thickness
Scar
Corrosion
Electromigration
Al projection due to Al-Si alloy formation
Al shift due to mild force
Passivation,
surface protective film,
Inter-layer insulation film
Pin hole
Crack
Uneven thickness
(step coverage block)
Unstable physical characteristics of film
Contamination
Surface Inversion
Die bonding Crack(uneven force, vold)
Chip peeling (insufficient adhesion strength)
Thermal fatigue
Wire bonding Substrate defect
Removed bonding
Intermatallic compound generation
Damage and crack below bonding
Bonding positional shift
Loose wiring
Line break
Short between lines
Package,
lead frame,
resin,
lead plating
Moisture(resin bulk)
Moisture(resin interface)
Impure ion of resin
Surface contamination
Hardening force
Lead rust, oxidation
Lead break
Particle
I/O pin Static electricity
Overvoltage